Calculated moments for the implantation of boron into silicides

The Monte Carlo computer program trim is used to calculate the projected range, the standard deviation, the skewness, and the kurtosis of implanted boron ion distributions in silicon, silicon dioxide, molybdenum disilicide, tantalum disilicide, titanium disilicide, and tungsten disilicide. The boron...

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Veröffentlicht in:	Journal of applied physics 1986-07, Vol.60 (1), p.14-16
Hauptverfasser:	PARKES, L. J, LAVINE, J. P
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography
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Beschreibung
Zusammenfassung:	The Monte Carlo computer program trim is used to calculate the projected range, the standard deviation, the skewness, and the kurtosis of implanted boron ion distributions in silicon, silicon dioxide, molybdenum disilicide, tantalum disilicide, titanium disilicide, and tungsten disilicide. The boron implantation energy ranges from 10 to 500 keV.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.337677