Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature

Ge-doped SbTe (Ge-ST) was compared with Ge 2 Sb 2 Te 5 (GST) for its potential use in the phase-change memory with improved stability at varying ambient temperature ( T A ) . Device characteristics such as RESET current, RESET resistance, and SET resistance of Ge-ST devices were found to vary signif...

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Veröffentlicht in:Applied physics letters 2010-03, Vol.96 (13), p.133510-133510-3
Hauptverfasser: Wu, Zhe, Lee, Suyoun, Park, Young-Wook, Ahn, Hyung-Woo, Jeong, Doo Seok, Jeong, Jeung-hyun, No, Kwangsoo, Cheong, Byung-ki
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Sprache:eng
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Zusammenfassung:Ge-doped SbTe (Ge-ST) was compared with Ge 2 Sb 2 Te 5 (GST) for its potential use in the phase-change memory with improved stability at varying ambient temperature ( T A ) . Device characteristics such as RESET current, RESET resistance, and SET resistance of Ge-ST devices were found to vary significantly less with T A than those of GST devices. From measured carrier density, mobility, and optical band gaps, these findings are interpreted to derive from a metallic nature of the crystalline Ge-ST in contrast with a semiconducting nature of the crystalline GST as well as a relatively weaker covalent bonding in amorphous Ge-ST.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3374334