Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature
Ge-doped SbTe (Ge-ST) was compared with Ge 2 Sb 2 Te 5 (GST) for its potential use in the phase-change memory with improved stability at varying ambient temperature ( T A ) . Device characteristics such as RESET current, RESET resistance, and SET resistance of Ge-ST devices were found to vary signif...
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Veröffentlicht in: | Applied physics letters 2010-03, Vol.96 (13), p.133510-133510-3 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Ge-doped SbTe (Ge-ST) was compared with
Ge
2
Sb
2
Te
5
(GST) for its potential use in the phase-change memory with improved stability at varying ambient temperature
(
T
A
)
. Device characteristics such as RESET current, RESET resistance, and SET resistance of Ge-ST devices were found to vary significantly less with
T
A
than those of GST devices. From measured carrier density, mobility, and optical band gaps, these findings are interpreted to derive from a metallic nature of the crystalline Ge-ST in contrast with a semiconducting nature of the crystalline GST as well as a relatively weaker covalent bonding in amorphous Ge-ST. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3374334 |