Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La,Sr)(Al,Ta)O3 bicrystal substrates

Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10-μm-wide microbridges spanning a 30°-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current–voltage characteristics u...

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Veröffentlicht in:Applied physics letters 2010-04, Vol.96 (14)
Hauptverfasser: Katase, Takayoshi, Ishimaru, Yoshihiro, Tsukamoto, Akira, Hiramatsu, Hidenori, Kamiya, Toshio, Tanabe, Keiichi, Hosono, Hideo
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10-μm-wide microbridges spanning a 30°-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current–voltage characteristics up to 17 K, and the critical current was suppressed remarkably by a magnetic field. Microbridges without a BGB did not show the RSJ-like behavior, and their critical current densities were 20 times larger than those of BGB bridges, confirming BGB bridges display a Josephson effect originating from weakly-linked BGB.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3371814