Ionized Mg doping in molecular-beam epitaxy of GaAs

Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular-beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019 cm−3 have bee...

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Veröffentlicht in:	Journal of applied physics 1986-02, Vol.59 (4), p.1092-1095
Hauptverfasser:	MANNOH, M, NOMURA, Y, SHINOZAKI, K, MIHARA, M, ISHII, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography
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Zusammenfassung:	Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular-beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019 cm−3 have been achieved. Photoluminescence measurements suggest that the damage due to Mg-ion bombardment is negligible when the ion accelerating voltage (Va) ≲130 V. For higher Va , the damage can be removed by postgrowth annealing.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.336545