Influence of intense laser field on the tunneling current in semiconductors

The influence of an intense laser field on the quasienergy gap of a semiconducting crystal as developed in the presence of an exciting laser field is discussed. It is shown that the effect of the strong laser is of ‘‘dressing’’ the quasienergy gap in that it becomes modulated by the strong field amp...

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Veröffentlicht in:	Journal of applied physics 1985-01, Vol.58 (11), p.4473-4476
Hauptverfasser:	TRONCONI, A. L, NUNES, O. A. C
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface double layers, schottky barriers, and work functions
Online-Zugang:	Volltext
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Zusammenfassung:	The influence of an intense laser field on the quasienergy gap of a semiconducting crystal as developed in the presence of an exciting laser field is discussed. It is shown that the effect of the strong laser is of ‘‘dressing’’ the quasienergy gap in that it becomes modulated by the strong field amplitude. The consequence of this latter effect on the tunneling current between a semiconductor-semiconductor junction is discussed. An application is made for a GaAs sample.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.336259