Photoluminescence and Raman scattering investigations of implanted and thermally annealed InP

Photoluminescence (PL) and Raman scattering experiments were carried out on Si-implanted and thermally annealed semi-insulating InP. The application of PL measurements to determine concentrations of free electrons at the surfaces of implanted samples is demonstrated. The carrier concentrations are e...

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Veröffentlicht in:	Journal of applied physics 1985-09, Vol.58 (5), p.1979-1981
Hauptverfasser:	OLEGO, D. J, SERREZE, H. B
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
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Zusammenfassung:	Photoluminescence (PL) and Raman scattering experiments were carried out on Si-implanted and thermally annealed semi-insulating InP. The application of PL measurements to determine concentrations of free electrons at the surfaces of implanted samples is demonstrated. The carrier concentrations are estimated from the measured widths of the PL line shapes. These estimates are compared with electron concentrations obtained from the Raman scattering measurements of the coupled modes.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.336005