Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates
The reduction in native oxides on GaAs surface during atomic layer deposition (ALD) of HfO2 using tetrakis-dimethylamino-hafnium precursor was investigated using x-ray photoelectron spectroscopy. The role of the ALD growth temperature on the reaction between surface oxides and precursor was studied....
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Veröffentlicht in: | Applied physics letters 2010-03, Vol.96 (11) |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The reduction in native oxides on GaAs surface during atomic layer deposition (ALD) of HfO2 using tetrakis-dimethylamino-hafnium precursor was investigated using x-ray photoelectron spectroscopy. The role of the ALD growth temperature on the reaction between surface oxides and precursor was studied. Interfacial oxide reduction was found to be insignificant for ALD at 200 °C, while nearly complete for growth at 300 °C. During postdeposition annealing at 400 °C, any arsenic oxides present were found to decompose, resulting in an increase in the interfacial gallium oxides. Thus, control of the ALD process plays a large role in determining interface properties. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3357422 |