Comparison of pulsed laser and furnace annealing of nitrogen-implanted silicon

We have studied pulsed ruby laser and furnace annealing of high-dose (D>1017 N/cm2) 50-keV nitrogen-implanted silicon. Using Rutherford backscattering and channeling, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffus...

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Veröffentlicht in:Journal of applied physics 1985-01, Vol.58 (1), p.193-196
Hauptverfasser: SMITH, T. P. III, STILES, P. J, AUGUSTNYIAK, W. M, BROWN, W. L, HULL, R, JACOBSON, D. C, KANT, R. A
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Sprache:eng
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Zusammenfassung:We have studied pulsed ruby laser and furnace annealing of high-dose (D>1017 N/cm2) 50-keV nitrogen-implanted silicon. Using Rutherford backscattering and channeling, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation, and nitride formation. As has been previously reported, during furnace annealing at or above 1200 °C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4) layer. In contrast, pulsed laser melting produces a buried amorphous layer containing silicon and nitrogen with only very small amounts of polycrystalline silicon nitride below a layer of polycrystalline silicon.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.335707