Junction properties of Au/ZnO single nanowire Schottky diode

Junction properties of Au/ZnO single nanowire Schottky diode

In this study, we have analyzed the Au/ZnO single nanowire based Schottky diode by investigating temperature dependent current voltage and x-ray photoelectron spectroscopy (XPS) measurements. The calculated barrier height of the Schottky diodes by using the thermionic emission model is in good agree...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2010-03, Vol.96 (9), p.092111-092111-3
Hauptverfasser: Das, Sachindra Nath, Choi, Ji-Huck, Kar, Jyoti Prakash, Moon, Kyeong-Ju, Lee, Tae Il, Myoung, Jae-Min
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this study, we have analyzed the Au/ZnO single nanowire based Schottky diode by investigating temperature dependent current voltage and x-ray photoelectron spectroscopy (XPS) measurements. The calculated barrier height of the Schottky diodes by using the thermionic emission model is in good agreement with the value obtained from the XPS measurements but lower than the theoretically predicted value. The ionization of interface states has been considered for explaining this discrepancy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3339883