InGaAsP/InGaP buried heterostructure lasers at 810 nm

InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1984-12, Vol.56 (11), p.3086-3087
Hauptverfasser:	VAKAO, K, ISOZUMI, S, NISHI, H, OHSAKA, S
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) ARSENIC COMPOUNDS ARSENIDES CURRENTS EFFICIENCY ELECTRIC CURRENTS ELECTROMAGNETIC RADIATION ENGINEERING EPITAXY Exact sciences and technology FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS GALLIUM PHOSPHIDES INDIUM ARSENIDES INDIUM COMPOUNDS INDIUM PHOSPHIDES INFRARED RADIATION LASERS LIQUID PHASE EPITAXY NEAR INFRARED RADIATION OPERATION OPTICAL MODES Optics OSCILLATION MODES PHOSPHIDES PHOSPHORUS COMPOUNDS Physics PNICTIDES POWER RANGE MILLI W QUANTUM EFFICIENCY RADIATIONS SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes THRESHOLD CURRENT
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Zusammenfassung:	InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 μm wide.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.333865