Activation energy associated with the annealing of buried implanted oxides in silicon

The activation energy associated with the annealing of buried implanted oxides in silicon is observed to be 0.15 eV. This value is much lower than those involved in the oxidation of silicon using other processes.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 1984-01, Vol.55 (8), p.3193-3194
Hauptverfasser:	DAS, K, CENSLIVE, M, FRANKS, E, BUTCHER, J. B
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The activation energy associated with the annealing of buried implanted oxides in silicon is observed to be 0.15 eV. This value is much lower than those involved in the oxidation of silicon using other processes.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.333354