The near ultraviolet quantum yield of silicon

New values for the quantum yield of silicon in the 3 to 5 eV spectral region are derived from reflectance and photoresponse measurements on oxide/p+/n/n+ photodiode structures. The new values fall between high and low estimates derived from a recent model of impact-ionization phenomena due to Alig,...

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Veröffentlicht in:	Journal of applied physics 1983-02, Vol.54 (2), p.1172-1174
Hauptverfasser:	WILKINSON, F. J, FARMER, A. J. D, GEIST, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Photoconduction and photovoltaic effects photodielectric effects Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	New values for the quantum yield of silicon in the 3 to 5 eV spectral region are derived from reflectance and photoresponse measurements on oxide/p+/n/n+ photodiode structures. The new values fall between high and low estimates derived from a recent model of impact-ionization phenomena due to Alig, Bloom, and Struck. A prominent peak in the new spectrum near 4.5 eV is attributed to the way the photon energy in excess of the band-gap energy is distributed between the photogenerated electrons and holes at different photon energies due to the band structure.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.332095