Hydrogen content of a variety of plasma-deposited silicon nitrides
The hydrogen contents and etch rates have been measured for plasma-deposited silicon nitrides made in nine different commercially available reactors as well as for some low pressure chemical vapor deposited nitrides. The hydrogen contents vary from 4% to 39% (atomic). A correlation is observed betwe...
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| Veröffentlicht in: | Journal of applied physics 1982-08, Vol.53 (8), p.5630-5633 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The hydrogen contents and etch rates have been measured for plasma-deposited silicon nitrides made in nine different commercially available reactors as well as for some low pressure chemical vapor deposited nitrides. The hydrogen contents vary from 4% to 39% (atomic). A correlation is observed between etch rate and hydrogen content, with etch rates varying over three orders of magnitude. |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.331445 |