Study of phosphorus implantation in silicon by channeling and nuclear resonance techniques

Depth profiles of 31P implanted in Si were measured nondestructively by the 31P( p,γ)32S nuclear resonant reactions. It was observed that a large amount of the implanted 31P migrated to the front surface by annealing at 600 °C for 10 min and escaped from the surface by annealing at 800 °C for 10 min in a high vacuum. Channeling analysis revealed this phenomenon to be intimately related to thermal recovery of the damaged layer introduced by high-dose implantation. The implantation dose and energy dependence of the distributions of lattice disorder was also measured by channeling methods.