Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates

The effect of compositional grading rate on reverse linear graded silicon germanium virtual substrates, grown by reduced pressure chemical vapor deposition, is investigated. For a Si ( 001 ) / Ge / RLG / Si 0.22 Ge 0.78 buffer of 2.4 μ m total thickness the threading dislocation density (TDD) within the top, fully relaxed, Si 0.22 Ge 0.78 layer is 4 × 10 6 cm − 2 , with a surface roughness of 3 nm. For a thicker buffer, where the grading rate is reduced, a lower TDD of 3 × 10 6 cm − 2 and a surface roughness of 2 nm can be achieved. The characteristics of reverse graded Si 0.22 Ge 0.78 virtual substrates are shown to be comparable to, or exceed, conventional buffer techniques, leading to thinner high-quality high Ge composition SiGe virtual substrates.