Grain boundary etching in InP

Grain boundary etching in InP

Grain boundaries in bulk polycrystalline InP wafers are preferentially attacked by a 5 HCl:3 HNO3:4 HF etch. Canyons with depths greater than 10 μm and widths approximately 1 μm are the most common form of attack. Although the etch has no effect on simple twin boundaries, preferential attack occurs...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:J. Appl. Phys.; (United States) 1980-07, Vol.51 (7), p.3663-3665
Hauptverfasser: Hershenson, Larry, Zanio, Ken
Format: Artikel
Sprache:eng
Schlagworte:
360602 - Other Materials- Structure & Phase Studies
CRYSTAL STRUCTURE
CRYSTALS
ETCHING
GRAIN BOUNDARIES
HYDROCHLORIC ACID
HYDROFLUORIC ACID
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INORGANIC ACIDS
INTERFACES
MATERIALS
MATERIALS SCIENCE
MICROSTRUCTURE
NITRIC ACID
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SURFACE FINISHING
TWINNING
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Grain boundaries in bulk polycrystalline InP wafers are preferentially attacked by a 5 HCl:3 HNO3:4 HF etch. Canyons with depths greater than 10 μm and widths approximately 1 μm are the most common form of attack. Although the etch has no effect on simple twin boundaries, preferential attack occurs at interfaces formed by multiple twinning events.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.328148