Blue light-emitting diodes with a roughened backside fabricated by wet etching

The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-face GaN surface were fabricated through a crystallographic etching process to increase light-extraction efficiency. After laser decomposition, laser scribing, and a lateral crystallographic wet etching process...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2009-11, Vol.95 (20)
Hauptverfasser:	Lin, Chia-Feng, Lin, Chun-Min, Chen, Kuei-Ting, Huang, Wan-Chun, Lin, Ming-Shiou, Dai, Jing-Jie, Jiang, Ren-Hao, Huang, Yu-Chieh, Chang, Chung-Ying
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!