Blue light-emitting diodes with a roughened backside fabricated by wet etching

The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-face GaN surface were fabricated through a crystallographic etching process to increase light-extraction efficiency. After laser decomposition, laser scribing, and a lateral crystallographic wet etching process...

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Veröffentlicht in:Applied physics letters 2009-11, Vol.95 (20)
Hauptverfasser: Lin, Chia-Feng, Lin, Chun-Min, Chen, Kuei-Ting, Huang, Wan-Chun, Lin, Ming-Shiou, Dai, Jing-Jie, Jiang, Ren-Hao, Huang, Yu-Chieh, Chang, Chung-Ying
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Sprache:eng
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Zusammenfassung:The InGaN-based light-emitting diodes (LEDs) with a roughened patterned backside on the N-face GaN surface were fabricated through a crystallographic etching process to increase light-extraction efficiency. After laser decomposition, laser scribing, and a lateral crystallographic wet etching process at the GaN/Al2O3 interface, stable crystallographic etching planes were formed as the GaN {1011¯} planes that included an angle with the top GaN (0001) plane measured at 58°. The GaN buffer layer acted as the sacrificial layer for the laser decomposition process and the lateral wet etching process with a 26 μm/min etching rate. The LED with the inverted pyramidal N-face GaN surface close to the GaN/Al2O3 interface has a larger light-scattering process than the conventional LED. The light-output power of the LED with the backside roughened surface had a 47% enhancement when measured in LED chip form.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3262968