Measurement of effective electron mass in biaxial tensile strained silicon on insulator
We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov-de Haas oscillations in t...
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| Veröffentlicht in: | Applied physics letters 2009-11, Vol.95 (18), p.182101-182101-3 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov-de Haas oscillations in the temperature range of
T
=
0.4
-
4
K
for magnetic fields of
B
=
0
-
10
T
were measured. The effective electron mass in SSOI and SOI samples was determined as
m
t
=
(
0.20
±
0.01
)
m
0
. This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.3254330 |