Three-dimensional structure of the buffer/absorber interface in CdS/CuGaSe2 based thin film solar cells

The chemical structure of the CdS/CuGaSe2 chalcopyrite solar cell buffer/absorber interface is investigated by combining element depth profiling using elastic recoil detection analysis and surface-near bulk sensitive x-ray emission spectroscopy. Significant Cd and S concentrations (≥0.1 at. %) are found deep in the absorber bulk. The determined high Cd and S diffusion coefficient values at 333 K of 3.6 and 3.4×10−12 cm2/s, respectively, are attributed to diffusion along CuGaSe2 grain boundaries. As a result, a three-dimensional buffer/absorber interface geometry is proposed.