Reliability properties of metal-oxide-semiconductor capacitors using LaAlO3 high-k dielectric

In this study, metal-oxide-semiconductor (MOS) capacitors with high dielectric constant LaAlO3 film were fabricated. Furthermore, the characteristic time-to-breakdown, TBD, of the MOS capacitors was investigated. The TBD was measured and the corresponding Weibull slopes, β, of the MOS capacitors wit...

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Veröffentlicht in:Applied physics letters 2009-10, Vol.95 (16)
Hauptverfasser: Yeh, Lingyen, Chang, Ingram Yin-Ku, Chen, Chun-Heng, Lee, Joseph Ya-Min
Format: Artikel
Sprache:eng
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Zusammenfassung:In this study, metal-oxide-semiconductor (MOS) capacitors with high dielectric constant LaAlO3 film were fabricated. Furthermore, the characteristic time-to-breakdown, TBD, of the MOS capacitors was investigated. The TBD was measured and the corresponding Weibull slopes, β, of the MOS capacitors with various LaAlO3 thicknesses were calculated. In addition, a modified percolation model was proposed to consider the extrinsic factors of breakdown. These extrinsic factors were described by an equivalent reduction of the path-to-breakdown, tex, in the model. Using this model, the calculated tex of the MOS capacitor was 5.8 nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3250242