Coengineering of ferroelectric and exchange bias properties in BiFeO3 based heterostructures

The magnetoelectric coupling existing in some multiferroics may allow the low-power electrical control of spintronics devices. However, room temperature magnetoelectric multiferroics are extremely rare, an exception being BiFeO3, a ferroelectric antiferromagnet. To be used for electrically controlla...

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Veröffentlicht in:Applied physics letters 2009-11, Vol.95 (18)
Hauptverfasser: Allibe, J., Infante, I. C., Fusil, S., Bouzehouane, K., Jacquet, E., Deranlot, C., Bibes, M., Barthélémy, A.
Format: Artikel
Sprache:eng
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Zusammenfassung:The magnetoelectric coupling existing in some multiferroics may allow the low-power electrical control of spintronics devices. However, room temperature magnetoelectric multiferroics are extremely rare, an exception being BiFeO3, a ferroelectric antiferromagnet. To be used for electrically controllable spintronics, BiFeO3 has to be coupled with a ferromagnetic material through an interfacial exchange interaction, and carefully engineered to show minimum leakage. Here, we propose a Mn doped/undoped bilayer strategy that allows obtaining large exchange bias as well as low leakage. This is an important step toward the manipulation of a magnetization by an electric field in a vertical geometry.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3247893