Coengineering of ferroelectric and exchange bias properties in BiFeO3 based heterostructures
The magnetoelectric coupling existing in some multiferroics may allow the low-power electrical control of spintronics devices. However, room temperature magnetoelectric multiferroics are extremely rare, an exception being BiFeO3, a ferroelectric antiferromagnet. To be used for electrically controlla...
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Veröffentlicht in: | Applied physics letters 2009-11, Vol.95 (18) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The magnetoelectric coupling existing in some multiferroics may allow the low-power electrical control of spintronics devices. However, room temperature magnetoelectric multiferroics are extremely rare, an exception being BiFeO3, a ferroelectric antiferromagnet. To be used for electrically controllable spintronics, BiFeO3 has to be coupled with a ferromagnetic material through an interfacial exchange interaction, and carefully engineered to show minimum leakage. Here, we propose a Mn doped/undoped bilayer strategy that allows obtaining large exchange bias as well as low leakage. This is an important step toward the manipulation of a magnetization by an electric field in a vertical geometry. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3247893 |