Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa

Real time changes of the GaAs band structure were determined using time-resolved photoluminescence (PL) spectroscopy, with nanosecond resolution, in single-event continuous compression experiments. Continuous compression to 5 GPa over 150 ns was achieved by impacting fused silica buffers preceding t...

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Veröffentlicht in:Applied physics letters 2009-10, Vol.95 (15), p.152108-152108-3
Hauptverfasser: Grivickas, P., McCluskey, M. D., Gupta, Y. M.
Format: Artikel
Sprache:eng
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Zusammenfassung:Real time changes of the GaAs band structure were determined using time-resolved photoluminescence (PL) spectroscopy, with nanosecond resolution, in single-event continuous compression experiments. Continuous compression to 5 GPa over 150 ns was achieved by impacting fused silica buffers preceding the GaAs crystals. PL spectra and compression wave profiles were measured simultaneously for uniaxial strain compression along the [100] orientation. Below 3 GPa, PL peaks from Te donors and Zn acceptors showed a blueshift upon compression, consistent with a widening of the band gap. At 3 GPa, the PL intensity decreased abruptly, due to a direct-to-indirect transition.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3247886