Thermal rectification at water/functionalized silica interfaces

Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of silica, self-assembled monolayers (SAMs) at the silica surface and water surrounding this system, by imposing a series of positive and negative heat currents. We have found that in the limi...

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Veröffentlicht in:Applied physics letters 2009-10, Vol.95 (15), p.151903-151903-3
Hauptverfasser: Hu, Ming, Goicochea, Javier V., Michel, Bruno, Poulikakos, Dimos
Format: Artikel
Sprache:eng
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Zusammenfassung:Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of silica, self-assembled monolayers (SAMs) at the silica surface and water surrounding this system, by imposing a series of positive and negative heat currents. We have found that in the limit of large heat currents, the thermal conductance at the SAMs-water interface is about 1000   MW / m 2 K at room temperature for heat flowing from the SAMs to the water and 650   MW / m 2 K for heat flowing from the water to the SAMs, respectively, resulting in a thermal rectification of up to 54%. Analysis of the radial distribution function of oxygen-oxygen atoms in water indicates that the origin of the thermal rectification resides in the strong temperature dependence of the hydrogen bonds in water.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3247882