Ultraviolet emission from a ZnO rod homojunction light-emitting diode

Ultraviolet electroluminescence was demonstrated at room temperature from a ZnO rod homojunction light-emitting diode array. The p -type doping was realized by phosphorous (P) ion implantation into defect-free ZnO rods followed by annealing. High resolution transmission electron microscopy shows the lattice compression of annealed single crystalline P -doped ZnO rod compared to the as-grown ZnO rod, suggesting atomically incorporation of P into the ZnO wurtzite structure. p -type doping was confirmed by low temperature photoluminescence spectra and single rod current-voltage characterization.