GaAs1− y P y heterojunction lasers

GaAs1− y P y heterojunction lasers

Data are presented showing that low-threshold (300 °K) visible-spectrum GaAs1−yPy and In1−xGaxP1−zAsz DH laser diodes can be grown on GaAs1−yPy substrates of composition at least as high as y=0.41, which corresponds to a short-wavelength limit of ∼6420 Å for the ternary and ∼6180 Å for the quaternar...

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Veröffentlicht in:Journal of applied physics 1977-09, Vol.48 (9), p.3991-3993
Hauptverfasser: Chin, R., Holonyak, N., Shichijo, H., Groves, W. O., Keune, D. L., Rossi, J. A.
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Sprache:eng
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Zusammenfassung:Data are presented showing that low-threshold (300 °K) visible-spectrum GaAs1−yPy and In1−xGaxP1−zAsz DH laser diodes can be grown on GaAs1−yPy substrates of composition at least as high as y=0.41, which corresponds to a short-wavelength limit of ∼6420 Å for the ternary and ∼6180 Å for the quaternary.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.324235