High-gain photoconductivity in semiconducting InN nanowires

High-gain photoconductivity in semiconducting InN nanowires

We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these InN nanowires. An enhanced photosensitivity from 0.3 to 14 is observed by lowerin...

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Veröffentlicht in:Applied physics letters 2009-10, Vol.95 (16), p.162112-162112-3
Hauptverfasser: Chen, Reui-San, Yang, Tsang-Ho, Chen, Hsin-Yi, Chen, Li-Chyong, Chen, Kuei-Hsien, Yang, Ying-Jay, Su, Chun-Hsi, Lin, Chii-Ruey
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Sprache:eng
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Zusammenfassung:We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these InN nanowires. An enhanced photosensitivity from 0.3 to 14 is observed by lowering the temperature from 300 to 10 K . A calculated ultrahigh photoconductive gain at around 8 × 10 7 at room temperature is obtained from the low-bandgap nitride nanowire under 808 nm excitation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3242023