Ion current reduction in pinched electron beam diodes

A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find t...

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Veröffentlicht in:J. Appl. Phys.; (United States) 1977-06, Vol.48 (6), p.2287-2293
Hauptverfasser: Quintenz, J. P., Poukey, J. W.
Format: Artikel
Sprache:eng
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Zusammenfassung:A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3-MV R/d=24 case this ratio was lowered by a factor of 6–8 compared with the corresponding nonreflexing-ion diode, while still producing a superpinched electron beam.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.324040