Ion current reduction in pinched electron beam diodes
A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find t...
Gespeichert in:
Veröffentlicht in: | J. Appl. Phys.; (United States) 1977-06, Vol.48 (6), p.2287-2293 |
---|---|
Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3-MV R/d=24 case this ratio was lowered by a factor of 6–8 compared with the corresponding nonreflexing-ion diode, while still producing a superpinched electron beam. |
---|---|
ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.324040 |