Room-temperature lasing of electrically pumped red-emitting InP/(Al0.20Ga0.80)0.51In0.49P quantum dots embedded in a vertical microcavity

We demonstrate electrically pumped laser light emission in the visible (red) spectral range using self-assembled InP quantum dots embedded in a microcavity mesa realized by monolithically grown high-reflectivity AlGaAs distributed Bragg reflectors. We used common semiconductor laser processing steps...

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Veröffentlicht in:Applied physics letters 2009-09, Vol.95 (13)
Hauptverfasser: Eichfelder, Marcus, Schulz, Wolfgang-Michael, Reischle, Matthias, Wiesner, Michael, Roßbach, Robert, Jetter, Michael, Michler, Peter
Format: Artikel
Sprache:eng
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Zusammenfassung:We demonstrate electrically pumped laser light emission in the visible (red) spectral range using self-assembled InP quantum dots embedded in a microcavity mesa realized by monolithically grown high-reflectivity AlGaAs distributed Bragg reflectors. We used common semiconductor laser processing steps to fabricate stand-alone index-guided vertical-cavity surface-emitting lasers with oxide apertures for optical wave-guiding and electrical current constriction. Ultra-low threshold of around 10 A/cm2 and room temperature lasing were demonstrated. Additionally, the temperature independence of the threshold current, which was predicted in theory for quantum dot lasers, is displayed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3236752