Spectroscopic study of V doped Hg0.018Cd0.981Mn0.001Te bulk crystals as near-infrared materials for optical applications
It was shown that the photosensitivity region of the semi-insulating V doped Hg0.018Cd0.981Mn0.001Te crystals extends up to 1800 nm and is caused by the electron photogeneration resulting in the transitions from the main T41(F) state to the excited A42(F)- and T41(P) states of V2+ ions, which are in...
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Veröffentlicht in: | Applied physics letters 2009-09, Vol.95 (11) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | It was shown that the photosensitivity region of the semi-insulating V doped Hg0.018Cd0.981Mn0.001Te crystals extends up to 1800 nm and is caused by the electron photogeneration resulting in the transitions from the main T41(F) state to the excited A42(F)- and T41(P) states of V2+ ions, which are in resonance with the conduction band. The electronic processes in the crystals are fast and correspond to the nanosecond region. Codoping by the Mn atoms leads to considerable improvement their optical quality and increase the resistivity. The obtained results indicate that such crystals can be considered as promising near-infrared materials for various optical applications. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3226670 |