Optical and microstructural studies of InGaN/GaN quantum dot ensembles

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature ver...

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Veröffentlicht in:Applied physics letters 2009-09, Vol.95 (11), p.111903-111903-3
Hauptverfasser: Davies, S. C., Mowbray, D. J., Ranalli, F., Parbrook, P. J., Wang, Q., Wang, T., Yea, B. S., Sherliker, B. J., Halsall, M. P., Kashtiban, R. J., Bangert, U.
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Sprache:eng
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Zusammenfassung:An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3226645