Characterization of blue-green m -plane InGaN light emitting diodes

High indium content blue-green (460-520 nm) m -plane InGaN light emitting diodes (LEDs) were grown on low defect-density m -plane GaN substrates. Systematic studies were performed on packaged blue-green LED lamps by using a range of well and barrier thicknesses. Photoluminance and electroluminance peak wavelengths increased while the well width was increased from 2 to 4 nm. The highest output power was achieved for well width of 2.5 nm. The output power improved significantly with the increase in barrier thickness. Nearly blueshift-free emission was observed in all LEDs from 1 - 400 A / cm 2 current density under pulsed operation.