Direct observation of localized conduction pathways in photocross-linkable polymer memory

Resistive switching in photocross-linkable polymer memory devices was found to occur in localized areas of the device. In order to elucidate the reason behind the switching, we used focused ion-beam to prepare a cross-section of the device. It was found that after the device was switched to the high conductive state, in certain parts of the device, the electrodes were only about 5 nm apart. This was probably caused by a combination of high electric field and metal injection into the polymer film. Gold injection into the polymer film by locally enhanced electric field was confirmed by transmission electron microscope-energy dispersive x-ray analysis. This model was in agreement with both the temperature dependent and transient behavior of our device. We conclude that the non-uniformities at the nanoscale interface of the electrode dominated the device characteristics while the polymer played only a secondary role.