Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy
Photoresponse from multicolor photodetector was measured in the spectral range of 0.4–6.0μm as a function of temperature and bias voltage. Devices were fabricated from wafers with an active region of five periods of GaAs quantum rings grown by droplet epitaxy technique on lattice matched Al0.3Ga0.7A...
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Veröffentlicht in: | Applied physics letters 2009-04, Vol.94 (17) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Photoresponse from multicolor photodetector was measured in the spectral range of 0.4–6.0μm as a function of temperature and bias voltage. Devices were fabricated from wafers with an active region of five periods of GaAs quantum rings grown by droplet epitaxy technique on lattice matched Al0.3Ga0.7As barriers. The photoresponse spectra exhibit two broad bands in the visible-near-infrared and midinfrared spectral regions. The visible-near-infrared band, which is due to interband transitions, was observed at temperatures as high as room temperature. On the other hand, the midinfrared band, which is due to intersubband transitions, was observed at temperature lower than 80K. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3126644 |