Generation and transport of photoexcited electrons in single-crystal diamond

We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ∼ 3   hours . By measuring the photoexc...

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Veröffentlicht in:Applied physics letters 2009-04, Vol.94 (15), p.152102-152102-3
Hauptverfasser: Heremans, F. J., Fuchs, G. D., Wang, C. F., Hanson, R., Awschalom, D. D.
Format: Artikel
Sprache:eng
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Zusammenfassung:We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ∼ 3   hours . By measuring the photoexcited Hall effect, we confirm that the charge carriers are electrons and by varying the excitation energy we observe a strong turn-on in the photoconduction at ∼ 1.9   eV . These findings shed light on sub-bandgap states in nitrogen-doped single-crystal diamond.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3120225