Generation and transport of photoexcited electrons in single-crystal diamond
We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ∼ 3 hours . By measuring the photoexc...
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Veröffentlicht in: | Applied physics letters 2009-04, Vol.94 (15), p.152102-152102-3 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of
∼
3
hours
. By measuring the photoexcited Hall effect, we confirm that the charge carriers are electrons and by varying the excitation energy we observe a strong turn-on in the photoconduction at
∼
1.9
eV
. These findings shed light on sub-bandgap states in nitrogen-doped single-crystal diamond. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3120225 |