Ultrafast photovoltaic effects in miscut Nb-doped SrTiO3 single crystals

Picosecond photovoltaic effect in miscut Nb-doped SrTiO3 single crystal has been observed under ultraviolet pulsed laser irradiation at ambient temperature without an applied bias. The 10%–90% rise time and the full width at half maximum are 828 and 670 ps, respectively, which is faster than that of...

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Veröffentlicht in:Journal of applied physics 2009-04, Vol.105 (8)
Hauptverfasser: Zhou, Na, Zhao, Kun, Liu, Hao, Lu, Zhiqing, Zhao, Hui, Tian, Lu, Liu, Wenwei, Zhao, Songqing
Format: Artikel
Sprache:eng
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Zusammenfassung:Picosecond photovoltaic effect in miscut Nb-doped SrTiO3 single crystal has been observed under ultraviolet pulsed laser irradiation at ambient temperature without an applied bias. The 10%–90% rise time and the full width at half maximum are 828 and 670 ps, respectively, which is faster than that of exact cut Nb-doped SrTiO3 single crystal. A model based on terrace structure is put forward to explain the observation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3116555