Junctionless multigate field-effect transistor

This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed device is a thin and narrow multigate field-effect transistor, which can be fully de...

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Veröffentlicht in:	Applied physics letters 2009-02, Vol.94 (5), p.053511-053511-2
Hauptverfasser:	Lee, Chi-Woo, Afzalian, Aryan, Akhavan, Nima Dehdashti, Yan, Ran, Ferain, Isabelle, Colinge, Jean-Pierre
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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