Nonvolatile static random access memory based on spin-transistor architecture

The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using a new type of spin transistor comprised of a metal-oxide-semiconductor field-effect transistor (MOSFET) and magnetic tunnel junction (MTJ) that is referred to as a pseudo-spin-MOSFE...

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Veröffentlicht in:Journal of applied physics 2009-04, Vol.105 (7), p.07C933-07C933-3
Hauptverfasser: Shuto, Yusuke, Yamamoto, Shuu'ichirou, Sugahara, Satoshi
Format: Artikel
Sprache:eng
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Zusammenfassung:The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using a new type of spin transistor comprised of a metal-oxide-semiconductor field-effect transistor (MOSFET) and magnetic tunnel junction (MTJ) that is referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit approach to reproduce the functions of spin transistors, based on recently progressed magnetoresistive random access memory technology. The proposed NV-SRAM cell can be simply configured by connecting two PS-MOSFETs to the storage nodes of a standard SRAM cell.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3076895