Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP

Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP

An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscop...

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Veröffentlicht in:Journal of applied physics 2009-01, Vol.105 (2), p.023711-023711-5
Hauptverfasser: Haegel, N. M., Mills, T. J., Talmadge, M., Scandrett, C., Frenzen, C. L., Yoon, H., Fetzer, C. M., King, R. R.
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container_issue 2
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container_title Journal of applied physics
container_volume 105
creator Haegel, N. M.
Mills, T. J.
Talmadge, M.
Scandrett, C.
Frenzen, C. L.
Yoon, H.
Fetzer, C. M.
King, R. R.
description An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscope coupled to a scanning electron microscope. Minority-carrier diffusion lengths ranging from 3 to 60   μ m are measured by this technique in double heterostructures of GaInP, GaAs, and GaInAs, providing a key parameter of interest to the performance of state-of-the-art triple junction solar cells. Here we show a direct measurement of anisotropy in minority-carrier mobility in ordered GaInP, which is evident in the oval-shaped distribution of the recombination luminescence. A factor of 1.6 increase in minority electron mobility along the [110] major axis is reported.
doi_str_mv 10.1063/1.3068196
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fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3068196</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-b301613beb8aa5d9d99473a4776c523c11edf2e09f77bf2b80f5540e1359886b3</originalsourceid><addsrcrecordid>eNp1kDFLAzEYhoMoWKuD_yCrw9XvuzSXZBGkai0UdNA55HJJidikJHHov7dytzq9y8PLw0PILcICoWP3uGDQSVTdGZkhSNUIzuGczABabKQS6pJclfIFgCiZmpHNU8jOVhr2ZhfijiZPTQwl1ZwOwdJ9iCmHemysyTm4TIfg_U8JKdIQacqDy26ga7OJ79fkwpvv4m6mnZPPl-eP1WuzfVtvVo_bxjLJa9MzwA5Z73ppDB_UoNRSMLMUorO8ZRbRDb51oLwQvW97CZ7zJThkXEnZ9WxO7sZfm1Mp2Xl9yCf7fNQI-q-BRj01OLEPI1tsqKaetP-HxxB6CqGT1yayX9lMY6k</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Haegel, N. M. ; Mills, T. J. ; Talmadge, M. ; Scandrett, C. ; Frenzen, C. L. ; Yoon, H. ; Fetzer, C. M. ; King, R. R.</creator><creatorcontrib>Haegel, N. M. ; Mills, T. J. ; Talmadge, M. ; Scandrett, C. ; Frenzen, C. L. ; Yoon, H. ; Fetzer, C. M. ; King, R. R.</creatorcontrib><description>An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscope coupled to a scanning electron microscope. Minority-carrier diffusion lengths ranging from 3 to 60   μ m are measured by this technique in double heterostructures of GaInP, GaAs, and GaInAs, providing a key parameter of interest to the performance of state-of-the-art triple junction solar cells. Here we show a direct measurement of anisotropy in minority-carrier mobility in ordered GaInP, which is evident in the oval-shaped distribution of the recombination luminescence. A factor of 1.6 increase in minority electron mobility along the [110] major axis is reported.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3068196</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2009-01, Vol.105 (2), p.023711-023711-5</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-b301613beb8aa5d9d99473a4776c523c11edf2e09f77bf2b80f5540e1359886b3</citedby><cites>FETCH-LOGICAL-c385t-b301613beb8aa5d9d99473a4776c523c11edf2e09f77bf2b80f5540e1359886b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3068196$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Haegel, N. M.</creatorcontrib><creatorcontrib>Mills, T. J.</creatorcontrib><creatorcontrib>Talmadge, M.</creatorcontrib><creatorcontrib>Scandrett, C.</creatorcontrib><creatorcontrib>Frenzen, C. L.</creatorcontrib><creatorcontrib>Yoon, H.</creatorcontrib><creatorcontrib>Fetzer, C. M.</creatorcontrib><creatorcontrib>King, R. R.</creatorcontrib><title>Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP</title><title>Journal of applied physics</title><description>An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscope coupled to a scanning electron microscope. Minority-carrier diffusion lengths ranging from 3 to 60   μ m are measured by this technique in double heterostructures of GaInP, GaAs, and GaInAs, providing a key parameter of interest to the performance of state-of-the-art triple junction solar cells. Here we show a direct measurement of anisotropy in minority-carrier mobility in ordered GaInP, which is evident in the oval-shaped distribution of the recombination luminescence. A factor of 1.6 increase in minority electron mobility along the [110] major axis is reported.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kDFLAzEYhoMoWKuD_yCrw9XvuzSXZBGkai0UdNA55HJJidikJHHov7dytzq9y8PLw0PILcICoWP3uGDQSVTdGZkhSNUIzuGczABabKQS6pJclfIFgCiZmpHNU8jOVhr2ZhfijiZPTQwl1ZwOwdJ9iCmHemysyTm4TIfg_U8JKdIQacqDy26ga7OJ79fkwpvv4m6mnZPPl-eP1WuzfVtvVo_bxjLJa9MzwA5Z73ppDB_UoNRSMLMUorO8ZRbRDb51oLwQvW97CZ7zJThkXEnZ9WxO7sZfm1Mp2Xl9yCf7fNQI-q-BRj01OLEPI1tsqKaetP-HxxB6CqGT1yayX9lMY6k</recordid><startdate>20090115</startdate><enddate>20090115</enddate><creator>Haegel, N. M.</creator><creator>Mills, T. J.</creator><creator>Talmadge, M.</creator><creator>Scandrett, C.</creator><creator>Frenzen, C. L.</creator><creator>Yoon, H.</creator><creator>Fetzer, C. M.</creator><creator>King, R. R.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090115</creationdate><title>Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP</title><author>Haegel, N. M. ; Mills, T. J. ; Talmadge, M. ; Scandrett, C. ; Frenzen, C. L. ; Yoon, H. ; Fetzer, C. M. ; King, R. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-b301613beb8aa5d9d99473a4776c523c11edf2e09f77bf2b80f5540e1359886b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Haegel, N. M.</creatorcontrib><creatorcontrib>Mills, T. J.</creatorcontrib><creatorcontrib>Talmadge, M.</creatorcontrib><creatorcontrib>Scandrett, C.</creatorcontrib><creatorcontrib>Frenzen, C. L.</creatorcontrib><creatorcontrib>Yoon, H.</creatorcontrib><creatorcontrib>Fetzer, C. M.</creatorcontrib><creatorcontrib>King, R. R.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Haegel, N. M.</au><au>Mills, T. J.</au><au>Talmadge, M.</au><au>Scandrett, C.</au><au>Frenzen, C. L.</au><au>Yoon, H.</au><au>Fetzer, C. M.</au><au>King, R. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP</atitle><jtitle>Journal of applied physics</jtitle><date>2009-01-15</date><risdate>2009</risdate><volume>105</volume><issue>2</issue><spage>023711</spage><epage>023711-5</epage><pages>023711-023711-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscope coupled to a scanning electron microscope. Minority-carrier diffusion lengths ranging from 3 to 60   μ m are measured by this technique in double heterostructures of GaInP, GaAs, and GaInAs, providing a key parameter of interest to the performance of state-of-the-art triple junction solar cells. Here we show a direct measurement of anisotropy in minority-carrier mobility in ordered GaInP, which is evident in the oval-shaped distribution of the recombination luminescence. A factor of 1.6 increase in minority electron mobility along the [110] major axis is reported.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3068196</doi><oa>free_for_read</oa></addata></record>
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title Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T04%3A21%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Direct%20imaging%20of%20anisotropic%20minority-carrier%20diffusion%20in%20ordered%20GaInP&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Haegel,%20N.%20M.&rft.date=2009-01-15&rft.volume=105&rft.issue=2&rft.spage=023711&rft.epage=023711-5&rft.pages=023711-023711-5&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.3068196&rft_dat=%3Cscitation_cross%3Ejap%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true