Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP

An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscop...

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Veröffentlicht in:Journal of applied physics 2009-01, Vol.105 (2), p.023711-023711-5
Hauptverfasser: Haegel, N. M., Mills, T. J., Talmadge, M., Scandrett, C., Frenzen, C. L., Yoon, H., Fetzer, C. M., King, R. R.
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Sprache:eng
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Zusammenfassung:An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscope coupled to a scanning electron microscope. Minority-carrier diffusion lengths ranging from 3 to 60   μ m are measured by this technique in double heterostructures of GaInP, GaAs, and GaInAs, providing a key parameter of interest to the performance of state-of-the-art triple junction solar cells. Here we show a direct measurement of anisotropy in minority-carrier mobility in ordered GaInP, which is evident in the oval-shaped distribution of the recombination luminescence. A factor of 1.6 increase in minority electron mobility along the [110] major axis is reported.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3068196