Characterization of high-k HfO2 films prepared using chemically modified alkoxy-derived solutions

The HfO2 films were prepared using alkoxy-derived precursor solutions. The effects of the chemical composition of precursor solutions on the microstructure development and electrical properties were investigated. The flatness and refractive index of the HfO2 films were improved by using diethanolamine-added solution. This result is considered to be due to the difference in the progress of organic decomposition and the behavior of nucleation and grain growth. The difference in the chemical composition affected the electrical properties such as leakage current and capacitance-voltage characteristics, which are related to the defects in the film and interface state.