Relevant correlation between electrical and magnetic properties for p-type InP:Zn implanted with Mn (10 at. %)

A relevant correlation between magnetic properties and Mn-related deep level states for the Mn-implanted p-type InMnP:Zn layers annealed at 400–600 °C was investigated. For the 600 °C-annealed sample, the portion of deep level transient spectroscopy signals corresponding to Mn-related states was observed to significantly increase while that related to charge-trapping centers observed for 400 and 500 °C-annealed samples drastically decreased. The sample showed the improved ferromagnetic properties compared with other samples. These results are considered as originating from the effective incorporation of Mn ions into the InP:Zn host lattice with recovering the crystallinity after thermal annealing.