Narrow-band deep-ultraviolet light emitting device using Al1−xGdxN

Narrow-band deep-ultraviolet light emitting device using Al1−xGdxN

We demonstrated mercury-free narrow-band deep-ultraviolet luminescence from field-emission devices with Al1−xGdxN thin films. The Al1−xGdxN thin films were grown on fused silica substrates by a radio frequency reactive magnetron sputtering method. The deposited film shows a strong c-axis preferentia...

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Veröffentlicht in:Applied physics letters 2008-11, Vol.93 (21)
Hauptverfasser: Kita, Takashi, Kitayama, Shinya, Kawamura, Masashi, Wada, Osamu, Chigi, Yoshitaka, Kasai, Yoshihiro, Nishimoto, Tetsuro, Tanaka, Hiroyuki, Kobayashi, Mikihiro
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container_issue 21
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container_title Applied physics letters
container_volume 93
creator Kita, Takashi
Kitayama, Shinya
Kawamura, Masashi
Wada, Osamu
Chigi, Yoshitaka
Kasai, Yoshihiro
Nishimoto, Tetsuro
Tanaka, Hiroyuki
Kobayashi, Mikihiro
description We demonstrated mercury-free narrow-band deep-ultraviolet luminescence from field-emission devices with Al1−xGdxN thin films. The Al1−xGdxN thin films were grown on fused silica substrates by a radio frequency reactive magnetron sputtering method. The deposited film shows a strong c-axis preferential orientation. A resolution limited, narrow intra-4f luminescence line from Gd3+ ions has been observed at 315nm. The luminescence spectrum depends on the growth temperature of the thin film, and the intensity varies as a function of the GdN mole fraction.
doi_str_mv 10.1063/1.3028341
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title Narrow-band deep-ultraviolet light emitting device using Al1−xGdxN
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