Narrow-band deep-ultraviolet light emitting device using Al1−xGdxN

We demonstrated mercury-free narrow-band deep-ultraviolet luminescence from field-emission devices with Al1−xGdxN thin films. The Al1−xGdxN thin films were grown on fused silica substrates by a radio frequency reactive magnetron sputtering method. The deposited film shows a strong c-axis preferential orientation. A resolution limited, narrow intra-4f luminescence line from Gd3+ ions has been observed at 315nm. The luminescence spectrum depends on the growth temperature of the thin film, and the intensity varies as a function of the GdN mole fraction.