X-ray in-plane scattering investigation of GaN nanorods

An x-ray method is described for the structure characterization of semiordered GaN nanorods. In contrast to other works based on synchrotron radiation, the method uses a standard x-ray laboratory equipment so that it is suitable for a rapid characterization of the nanorods in a technological laboratory. The method uses a grazing-incidence diffraction setup and it makes it possible to determine the mean size of the rods and their angular twist with respect to the crystalline substrate. The applicability of the method is demonstrated on a series of GaN nanorod samples and the parameters of the nanorods are compared with the results of scanning electron microscopy.