Nanoscale charge transport measurements using a double-tip scanning tunneling microscope

We demonstrate the ability of a double-tip scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM) to perform charge transport measurements on the nanoscale. The STM tips serve as electric probes that can be precisely positioned relative to the surface nanostructures using the SEM control and the height reference provided by the tunneling contact. The tips work in contact, noncontact, and tunneling modes. We present vertical transport measurements on nanosized GaAs/AlAs resonant tunneling diodes and lateral transport measurements on the conductive surface of 7 × 7 reconstructed Si(111). The high stability of the double-tip STM allows nondestructive electrical contacts to surfaces via the tunneling gaps. We performed two-point electrical measurements via tunneling contacts on the Si ( 111 ) ( 7 × 7 ) surface and evaluated them using a model for the charge transport on this surface.