Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

The free hole carriers in GaN have been limited to concentrations in the low 1018cm−3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a pe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2008-10, Vol.93 (17)
Hauptverfasser: Namkoong, Gon, Trybus, Elaissa, Lee, Kyung Keun, Moseley, Michael, Doolittle, W. Alan, Look, David C.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The free hole carriers in GaN have been limited to concentrations in the low 1018cm−3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5×1019cm−3.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3005640