Thin-film passivation by atomic layer deposition for organic field-effect transistors

The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90°C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick Al...

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Veröffentlicht in:Applied physics letters 2008-10, Vol.93 (16)
Hauptverfasser: Jeon, Hayoung, Shin, Kwonwoo, Yang, Chanwoo, Park, Chan Eon, Park, Sang-Hee Ko
Format: Artikel
Sprache:eng
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Zusammenfassung:The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90°C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick AlOx passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434g∕m2∕day. In addition, the mobility of the AlOx-passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2months as a result of the excellent barrier properties of the passivation layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3000017