Thin-film passivation by atomic layer deposition for organic field-effect transistors
The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90°C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick Al...
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Veröffentlicht in: | Applied physics letters 2008-10, Vol.93 (16) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90°C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick AlOx passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434g∕m2∕day. In addition, the mobility of the AlOx-passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2months as a result of the excellent barrier properties of the passivation layer. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3000017 |