A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

In this letter, we present electrical characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs) on n- and p-type GaAs, In0.53Ga0.47As, InAs, and InSb substrates, along with the effect of a thin germanium interfacial passivation layer. We found that MOSCAPs on all n-type substrates...

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Veröffentlicht in:Applied physics letters 2008-08, Vol.93 (6)
Hauptverfasser: Kim, Hyoung-Sub, Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Lee, Jack C., Majhi, Prashant, Goel, N., Tsai, W., Gaspe, C. K., Santos, M. B.
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Sprache:eng
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Zusammenfassung:In this letter, we present electrical characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs) on n- and p-type GaAs, In0.53Ga0.47As, InAs, and InSb substrates, along with the effect of a thin germanium interfacial passivation layer. We found that MOSCAPs on all n-type substrates showed good C-V characteristics with small frequency dispersion (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2972107