Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope

Local strains in the channel and source/drain (S/D) of an advanced complementary metal-oxide-semiconductor device were measured by the geometric phase analysis applied to high resolution transmission electron microscope images. Two-dimensional strain maps were reconstructed for a 45nm p-type metal-oxide-semiconductor device which was strain-engineered using a recessed Si0.82Ge0.18 S/D. Lateral strains were uniform across the channel but vertical strains were found to vary considerably in the channel. Measured strains were used to estimate stresses and hole mobility enhancements.